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Publikation

Impact of NBTI on Increasing the Susceptibility of FinFET to Radiation

Frank Sill Torres; Hussam Amrouch; Jörg Henkel; Rolf Drechsler
In: IEEE International Reliability Physics Symposium (IRPS 2019). IRPS (IEEE International Reliability Physics Symposium) (IRPS-2019), March 31 - April 4, Monterey, CA, USA, 2019.

Zusammenfassung

This work investigates the interaction between Neg-ative Bias Temperature Instability (NBTI) and radiation effectsin14nm FinFET devices. Due to the complex interaction betweentraps generated by NBTI and induced charges by strikes ofionizing particles, we opted for a complete physical-based analysisusing TCAD mixed-mode simulations. This enables an accurateestimation and then modeling of the duration a circuit requiresto recover from a particle strike and, thus, return to correctoperation under the effects of NBTI. This a crucial aspect,because the longer the recovery time, the higher the probabilitiesof a soft-error and that this error remains undetected. Further,our employed setup enables an accurate determination of thecritical charge (Qcrit), i. e. the minimum collected charge thatresults into a faulty transition of a circuit’s output node. Ourinvestigation reveals that there is indeed a strong relation betweenNBTI and the time a circuit remains in faulty state. Consequently,detection schemes must be adapted during circuit’s operation totake aging into account in order to avoid that errors remainundetected.