The use of memristors, also known as Resistive Random Access Memory (ReRAM), has been
widely investigated in recent years for non-volatile memory design applications. Memristors
can also be used for realizing logic operations, leading to new in-memory computing (IMC)
architectures. However, the presence of sneak paths in crossbar arrays limits the practical use
of such systems. In this paper, we introduce a novel sneak path-free ReRAM system capable
of both memory and logic operations using Complementary Resistive Switches (CRS) or
Complementary Memristors (CMs) crossbar array. CMs can mitigate the effect of sneak paths
and are good candidates for realizing three-dimensional memory array. A novel IMC-enabled
two-dimensional (2D) and three-dimensional (3D) crossbar architecture have been proposed. The
devices are modeled using the VTEAM memristor model and can perform majority (MAJ) gate
operations directly on the crossbar. A logic mapping approach is also proposed, allowing serial
and parallel evaluation of MAJ operations for given high-level logic functions. The efficacy of
the approach has been evaluated by estimating the computation cycles, crossbar size, delay, and
energy for various benchmark functions. The results show that the proposed method yields up to
91.19% improvement over an existing IMC method in computation steps and 78.90% reduction
in terms of the number of memristors required.
@article{pub12318,
author = {
Lalchhandama, Fanchun
and
Datta, Kamalika
and
Chakraborty, Sandip
and
Drechsler, Rolf
and
Sengupta, Indranil
},
editor = {
Gu, Zonghua
},
title = {CoMIC: Complementary Memristor based In-memory Computing in 3D Architecture},
year = {2022},
month = {5},
volume = {126},
number = {5},
pages = {1--13},
journal = {Journal of Systems Architecture: Embedded Software Design (JSA)},
publisher = {Science Direct}
}
Deutsches Forschungszentrum für Künstliche Intelligenz German Research Center for Artificial Intelligence