Impact of NBTI on Increasing the Susceptibility of FinFET to Radiation

Frank Sill Torres, Hussam Amrouch, Jörg Henkel, Rolf Drechsler

In: IEEE International Reliability Physics Symposium (IRPS 2019). IRPS (IEEE International Reliability Physics Symposium) (IRPS-2019) March 31-April 4 Monterey CA United States 2019.


This work investigates the interaction between Neg-ative Bias Temperature Instability (NBTI) and radiation effectsin14nm FinFET devices. Due to the complex interaction betweentraps generated by NBTI and induced charges by strikes ofionizing particles, we opted for a complete physical-based analysisusing TCAD mixed-mode simulations. This enables an accurateestimation and then modeling of the duration a circuit requiresto recover from a particle strike and, thus, return to correctoperation under the effects of NBTI. This a crucial aspect,because the longer the recovery time, the higher the probabilitiesof a soft-error and that this error remains undetected. Further,our employed setup enables an accurate determination of thecritical charge (Qcrit), i. e. the minimum collected charge thatresults into a faulty transition of a circuit’s output node. Ourinvestigation reveals that there is indeed a strong relation betweenNBTI and the time a circuit remains in faulty state. Consequently,detection schemes must be adapted during circuit’s operation totake aging into account in order to avoid that errors remainundetected.

Deutsches Forschungszentrum für Künstliche Intelligenz
German Research Center for Artificial Intelligence